G Skill Intl F2-8500CL5-2GBPI 2GB vs G Skill Intl F4-2800C18-8GRS 8GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

G Skill Intl F4-2800C18-8GRS 8GB

G Skill Intl F4-2800C18-8GRS 8GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 16

测试中的平均数值
更快的写入速度，GB/s

2,935.8 12.8

测试中的平均数值

G Skill Intl F4-2800C18-8GRS 8GB

需要考虑的原因
G Skill Intl F4-2800C18-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 45

左右 -67% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-2800C18-8GRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 27
读取速度，GB/s

6,336.8 16.0
写入速度，GB/s

2,935.8 12.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1144 2773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905403-011.A03LF 2GB

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OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

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Samsung M378B5673EH1-CF8 2GB

Crucial Technology CB8GU2400.C8JT 8GB

Crucial Technology CB8GU2400.C8JT 8GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

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Kingston 8ATF1G64AZ-2G1B1 8GB

Ramaxel Technology RMR5040MM58F9F1600 4GB

Ramaxel Technology RMR5040MM58F9F1600 4GB

Corsair CMK32GX4M4D3600C18 8GB

Corsair CMK32GX4M4D3600C18 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB