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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-4400C16-8GVK 8GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs G Skill Intl F4-4400C16-8GVK 8GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
G Skill Intl F4-4400C16-8GVK 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
20.9
测试中的平均数值
需要考虑的原因
G Skill Intl F4-4400C16-8GVK 8GB
报告一个错误
低于PassMark测试中的延时,ns
21
45
左右 -114% 更低的延时
更快的写入速度,GB/s
21.0
2,935.8
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-4400C16-8GVK 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
21
读取速度,GB/s
6,336.8
20.9
写入速度,GB/s
2,935.8
21.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1144
4250
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
G Skill Intl F4-4400C16-8GVK 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-4400C16-8GVK 8GB
Kingston ACR512X64D3S13C9G 4GB
Apacer Technology 78.C1GM3.C7Z0C 8GB
Kingston 39P5429-006.AO01 2GB
Kingston 9905700-047.A00G 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMW16GX4M1D3000C16 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMK16GX4M1A2400C16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB
SK Hynix HMT451S6AFR8A-PB 4GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905702-002.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA81GS6JJR8N-VK 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK64GX4M4B3200C16 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4400C18-8GTRG 8GB
A-DATA Technology DQKD1A08 1GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
报告一个错误
×
Bug description
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