RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 14.6
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 45
    左右 -80% 更低的延时
  • 更快的写入速度，GB/s
    9.9 left arrow 2,935.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 25
  • 读取速度，GB/s
    6,336.8 left arrow 14.6
  • 写入速度，GB/s
    2,935.8 left arrow 9.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 2427

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB RAM的比较

Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston KP223C-ELD 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9905598-039.A00G 16GB
Kingston 9905598-039.A00G 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Crucial Technology BL32G32C16U4BL.M16FB 32GB
Crucial Technology BL32G32C16U4BL.M16FB 32GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-2666C18-4GFX 4GB
G Skill Intl F4-2666C18-4GFX 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Apacer Technology GD2.22428S.001 8GB
Apacer Technology GD2.22428S.001 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMWX8GD3000C16W4D 8GB
Corsair CMWX8GD3000C16W4D 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-3000C16-8GRS 8GB
G Skill Intl F4-3000C16-8GRS 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston HP26D4U9D8HC-16X 16GB
Kingston HP26D4U9D8HC-16X 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Corsair CM4X8GE2133C13K4 8GB
Corsair CM4X8GE2133C13K4 8GB
内存RAM