Kingston 8ATF1G64AZ-2G1B1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

总分

Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

差异规格评论

差异

Kingston 8ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Kingston 8ATF1G64AZ-2G1B1 8GB

报告一个错误

更快的读取速度，GB/s

17.7 14.6

测试中的平均数值
更快的写入速度，GB/s

12.8 9.9

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时

规格

完整的技术规格清单

Kingston 8ATF1G64AZ-2G1B1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

17.7 14.6
写入速度，GB/s

12.8 9.9
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3152 2427

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D240FSB.M8FBD 4GB

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Kingston 8ATF1G64AZ-2G1B1 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO10240

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston KHX3733C19D4/16GX 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-2400C15-8GFX 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Mushkin 99[2/7/4]205[F/T] 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Samsung M393B1K70CH0-CH9 8GB

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Kingston KHX4000C19D4/8GX 8GB

Kingston KHX4000C19D4/8GX 8GB