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G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
10.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
37
45
左右 -22% 更低的延时
更快的写入速度,GB/s
7.8
2,935.8
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
37
读取速度,GB/s
6,336.8
10.4
写入速度,GB/s
2,935.8
7.8
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1144
2213
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Kingston 9965525-155.A00LF 8GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMK16GX4M2Z3200C16 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Super Talent F24UB16GV 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2800C16-8GVG 8GB
Kingston 99P5471-002.A00LF 2GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
A-DATA Technology DQVE1908 512MB
Avant Technology J641GU49J2320NE 8GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Kingston K821PJ-MID 16GB
AMD R538G1601U2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
PNY Electronics PNY 2GB
G Skill Intl F4-3400C16-8GSXW 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M386A8K40BM1-CRC 64GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMW64GX4M4A2666C16 16GB
报告一个错误
×
Bug description
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