G Skill Intl F2-8500CL5-2GBPI 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 13.5

测试中的平均数值
更快的写入速度，GB/s

2,935.8 10.2

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 45

左右 -55% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 29
读取速度，GB/s

6,336.8 13.5
写入速度，GB/s

2,935.8 10.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1144 2088

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A2K43BB1-CPB 16GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

SK Hynix HMT351U6BFR8C-H9 4GB

SK Hynix HMT351U6BFR8C-H9 4GB

Corsair CMK16GX4M2L3000C15 8GB

Corsair CMK16GX4M2L3000C15 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA81GU6AFR8N-UH 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Kingston CAC24D4S7D8MB-16 16GB

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Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9905665-023.A00G 4GB

Kingston 9905665-023.A00G 4GB

Samsung M393A1K43BB1-CTD 8GB

Samsung M393A1K43BB1-CTD 8GB

A-DATA Technology AD5U480016G-B 16GB

A-DATA Technology AD5U480016G-B 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9905700-046.A00G 16GB

Kingston 9905700-046.A00G 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Apacer Technology 78.C2GFP.C700B 8GB

Apacer Technology 78.C2GFP.C700B 8GB