RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Micron Technology 16ATF2G64AZ-2G3E1 16GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Micron Technology 16ATF2G64AZ-2G3E1 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
13.3
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3E1 16GB
报告一个错误
低于PassMark测试中的延时,ns
42
45
左右 -7% 更低的延时
更快的写入速度,GB/s
9.0
2,935.8
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
42
读取速度,GB/s
6,336.8
13.3
写入速度,GB/s
2,935.8
9.0
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1144
2427
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Micron Technology 16ATF2G64AZ-2G3E1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-2800C15-4GVRB 4GB
Kingston 9905403-134.A00LF 2GB
Corsair CM4X16GE2400C16S4 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Apacer Technology 78.CAGPP.ARC0B 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BL32G32C16S4B.16FB 32GB
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
Kingston ACR16D3LS1NGG/2G 2GB
Kingston LV36D4U1S8HD-8XR 8GB
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-4000C18-16GTZR 16GB
AMD R5316G1609U2K 8GB
Samsung M471A1K1KCB1-CRC 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
报告一个错误
×
Bug description
Source link