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Samsung M393B1G70QH0-YK0 8GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB

Samsung M393B1G70QH0-YK0 8GB vs Micron Technology 18ADF2G72PZ-2G3B1 16GB

总分
star star star star star
Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分
star star star star star
Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

差异 规格 评论

差异

Samsung M393B1G70QH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB
报告一个错误
Micron Technology 18ADF2G72PZ-2G3B1 16GB 需要考虑的原因
Micron Technology 18ADF2G72PZ-2G3B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 52
    左右 -63% 更低的延时
  • 更快的读取速度，GB/s
    11.8 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 32
  • 读取速度，GB/s
    9.8 left arrow 11.8
  • 写入速度，GB/s
    8.0 left arrow 8.7
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2179 left arrow 2585

Samsung M393B1G70QH0-YK0 8GB RAM的比较

Kingston 9965433-406.A00LF 8GB
Samsung M393B1G70BH0-YK0 8GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
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Kingston HP37D4U1S8ME-16XR 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Samsung M3 93T2950EZ3-CCC 1GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-4800C19-8GTZRC 8GB
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内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
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Kingston XK2M26-MIE 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
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Peak Electronics 256X64M-67E 2GB
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内存RAM
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Lexar Co Limited LD4AU016G-H3200GST 16GB
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Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-4000C16-8GTZRA 8GB
G Skill Intl F4-4000C16-8GTZRA 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
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内存RAM
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Corsair CMW32GX4M4D3600C16 8GB
内存RAM
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Ramos Technology EWB8GB681CA3-16IC 8GB
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Corsair CMK16GX4M1C3000C16 16GB
内存RAM
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G Skill Intl F2-8500CL5-2GBPI 2GB
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Kingston 9965604-027.D00G 8GB
内存RAM