G Skill Intl F2-8500CL5-2GBPI 2GB vs Micron Technology 8ATF1G64AZ-2G6B1 8GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 19.1

测试中的平均数值
更快的写入速度，GB/s

2,935.8 14.5

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G6B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 45

左右 -114% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 21
读取速度，GB/s

6,336.8 19.1
写入速度，GB/s

2,935.8 14.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1144 3427

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Micron Technology 8R8F1G64HZ-2G3B1 8GB

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Kingston 99U5469-045.A00LF 4GB

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SK Hynix HMAA4GS6CJR8N-XN 32GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

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Micron Technology 4ATF51264HZ-2G6E1 4GB

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Samsung M393A2K43BB1-CRCA1 16GB

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Crucial Technology BL16G36C16U4B.M16FE1 16GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Corsair CMD16GX4M4B3000C15 4GB

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Kingston 9905471-002.A00LF 2GB

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Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N