Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-4000C19-16GTRG 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 19.4

测试中的平均数值
更快的写入速度，GB/s

2,622.0 18.9

测试中的平均数值

G Skill Intl F4-4000C19-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTRG 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 77

左右 -221% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4000C19-16GTRG 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 24
读取速度，GB/s

3,405.2 19.4
写入速度，GB/s

2,622.0 18.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 4219

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

Kingston 99U5428-065.A00LF 8GB

Kingston 99U5428-065.A00LF 8GB

A-DATA Technology DDR4 2133 2OZ 8GB

A-DATA Technology DDR4 2133 2OZ 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMW8GX4M1Z3200C16 8GB

Corsair CMW8GX4M1Z3200C16 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

G Skill Intl F4-3333C16-8GTZKW 8GB

G Skill Intl F4-3333C16-8GTZKW 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Corsair CMD32GX4M4C3200C14T 8GB

Corsair CMD32GX4M4C3200C14T 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Corsair CMW32GX4M4K3733C17 8GB

Corsair CMW32GX4M4K3733C17 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Patriot Memory (PDP Systems) PSD48G213381S 8GB

Patriot Memory (PDP Systems) PSD48G213381S 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

Crucial Technology BLT16G4D30BET4.C16FD 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

G Skill Intl F4-3000C16-8GISB 8GB

G Skill Intl F4-3000C16-8GISB 8GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB

Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266