Kingston KP223C-ELD 2GB vs G Skill Intl F4-3000C16-8GISB 8GB

总分

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

总分

G Skill Intl F4-3000C16-8GISB 8GB

G Skill Intl F4-3000C16-8GISB 8GB

差异规格评论

差异

Kingston KP223C-ELD 2GB

需要考虑的原因
Kingston KP223C-ELD 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

G Skill Intl F4-3000C16-8GISB 8GB

需要考虑的原因
G Skill Intl F4-3000C16-8GISB 8GB

报告一个错误

更快的读取速度，GB/s

17 13.4

测试中的平均数值
更快的写入速度，GB/s

13.3 8.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston KP223C-ELD 2GB

G Skill Intl F4-3000C16-8GISB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.4 17.0
写入速度，GB/s

8.8 13.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2137 3234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMX4GX3M2A1600C9 2GB

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Crucial Technology BLS8G4D240FSA.16FBD 8GB

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Samsung M471B5273CH0-CH9 4GB

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Crucial Technology CT8G4DFRA266.C8FB 8GB

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Hyundai Inc AR32C16S8K2SU416R 8GB

Hyundai Inc AR32C16S8K2SU416R 8GB

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Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BL8G26C16U4R.8FD 8GB

Crucial Technology BL8G26C16U4R.8FD 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

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A-DATA Technology AM1P26KC8T1-BAAS 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology CB16GS2400.C16J 16GB