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G Skill Intl F2-8500CL5-2GBPI 2GB
Netac Technology Co Ltd E40832A 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs Netac Technology Co Ltd E40832A 8GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,935.8 left arrow 10.8
    测试中的平均数值
Netac Technology Co Ltd E40832A 8GB 需要考虑的原因
Netac Technology Co Ltd E40832A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 45
    左右 -32% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Netac Technology Co Ltd E40832A 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 34
  • 读取速度，GB/s
    6,336.8 left arrow 16.4
  • 写入速度，GB/s
    2,935.8 left arrow 10.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 2732

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

Netac Technology Co Ltd E40832A 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 16KTF1G64HZ-1G6E2 8GB
Micron Technology 16KTF1G64HZ-1G6E2 8GB
Micron Technology 16KTF1G64HZ-1G6E1 8GB
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内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3600C14-8GTZNB 8GB
G Skill Intl F4-3600C14-8GTZNB 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Netac Technology Co Ltd E40832A 8GB
Netac Technology Co Ltd E40832A 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M471A2K43EB1-CTD 16GB
Samsung M471A2K43EB1-CTD 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMU32GX4M4C3400C16 8GB
Corsair CMU32GX4M4C3400C16 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905678-173.A00G 8GB
Kingston 9905678-173.A00G 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A4G43AB1-CWE 32GB
Samsung M471A4G43AB1-CWE 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMK32GX4M2Z3200C16 16GB
Corsair CMK32GX4M2Z3200C16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMD32GX4M2B3000C15 16GB
Corsair CMD32GX4M2B3000C15 16GB
内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Transcend Information TS2GSH64V4B 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CM4B8G4J2400A16K2-ON 8GB
Corsair CM4B8G4J2400A16K2-ON 8GB
内存RAM