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Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
比较
Patriot Memory (PDP Systems) PSD22G8002 2GB vs Crucial Technology CT16G4DFD8266.M16FD 16GB
总分
Patriot Memory (PDP Systems) PSD22G8002 2GB
总分
Crucial Technology CT16G4DFD8266.M16FD 16GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) PSD22G8002 2GB
报告一个错误
更快的读取速度,GB/s
4
17.6
测试中的平均数值
更快的写入速度,GB/s
2,109.3
13.7
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4DFD8266.M16FD 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
60
左右 -107% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
29
读取速度,GB/s
4,162.7
17.6
写入速度,GB/s
2,109.3
13.7
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
784
3432
Patriot Memory (PDP Systems) PSD22G8002 2GB RAM的比较
Apacer Technology 75.A73AA.G03 2GB
Patriot Memory (PDP Systems) PSD22G80026 2GB
Crucial Technology CT16G4DFD8266.M16FD 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
Kingston 9965525-140.A00LF 8GB
Kingston HP698651-154-KEB 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905744-006.A00G 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4DFD8213.C16FDD2 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-2666C18-32GTZN 32GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Avant Technology F6451U64F9333G 4GB
Corsair CMW32GX4M4A2666C16 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMD128GX4M8A2400C14 16GB
Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
报告一个错误
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