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Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT4G4SFS624A.C4FB 4GB

Samsung M3 78T2863QZS-CF7 1GB vs Crucial Technology CT4G4SFS624A.C4FB 4GB

总分
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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分
star star star star star
Crucial Technology CT4G4SFS624A.C4FB 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

差异 规格 评论

差异

Samsung M3 78T2863QZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    69 left arrow 84
    左右 18% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 14.8
    测试中的平均数值
Crucial Technology CT4G4SFS624A.C4FB 4GB 需要考虑的原因
Crucial Technology CT4G4SFS624A.C4FB 4GB
报告一个错误
  • 更快的写入速度，GB/s
    6.8 left arrow 1,857.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 84
  • 读取速度，GB/s
    4,217.2 left arrow 14.8
  • 写入速度，GB/s
    1,857.7 left arrow 6.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    668 left arrow 1574

Samsung M3 78T2863QZS-CF7 1GB RAM的比较

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Crucial Technology CT4G4SFS624A.C4FB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3400C16-16GVK 16GB
G Skill Intl F4-3400C16-16GVK 16GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Corsair CMK16GX4M4C3200C15 4GB
Corsair CMK16GX4M4C3200C15 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
内存RAM
Team Group Inc. Team-Value-800 2GB
Team Group Inc. Team-Value-800 2GB
G Skill Intl F4-3200C16-8GTZSW 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3333C16-8GTZSW 8GB
G Skill Intl F4-3333C16-8GTZSW 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C18-32GTZR 32GB
G Skill Intl F4-3600C18-32GTZR 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KHX2133C14S4/16G 16GB
Kingston KHX2133C14S4/16G 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C17-8GTRG 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Corsair CMK32GX4M4B3200C14 8GB
Corsair CMK32GX4M4B3200C14 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Corsair CMW64GX4M2D3600C18 32GB
Corsair CMW64GX4M2D3600C18 32GB
内存RAM