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Kingston ACR16D3LS1NGG/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
比较
Kingston ACR16D3LS1NGG/2G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
总分
Kingston ACR16D3LS1NGG/2G 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
84
左右 -190% 更低的延时
更快的读取速度,GB/s
13.5
5
测试中的平均数值
更快的写入速度,GB/s
10.2
3.6
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston ACR16D3LS1NGG/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
84
29
读取速度,GB/s
5.0
13.5
写入速度,GB/s
3.6
10.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
878
2088
Kingston ACR16D3LS1NGG/2G 2GB RAM的比较
Kingston 99U5469-053.A00LF 4GB
EVGA 8GX-D4-3200-MR 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB RAM的比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-134.A00LF 2GB
Corsair CMW64GX4M2D3600C18 32GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C16-8GSXKB 8GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C16-16GTRSA 16GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMW32GX4M4C3000C15 8GB
Kingston 9905469-143.A00LF 4GB
Corsair CMK8GX4M1A2666C16 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-2933C14-8GTZRX 8GB
Kingston HP698651-154-MCN 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston HX424C15PB/4 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Corsair CMR16GX4M2D3000C16 8GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix GKE800UD102408-2400 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Gloway International (HK) STK4U2133D15081C 8GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
报告一个错误
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