Avant Technology F6451U64F9333G 4GB vs Corsair CMW32GX4M4A2666C16 8GB

总分

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分

Corsair CMW32GX4M4A2666C16 8GB

Corsair CMW32GX4M4A2666C16 8GB

差异规格评论

差异

Avant Technology F6451U64F9333G 4GB

需要考虑的原因
Avant Technology F6451U64F9333G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

Corsair CMW32GX4M4A2666C16 8GB

需要考虑的原因
Corsair CMW32GX4M4A2666C16 8GB

报告一个错误

更快的读取速度，GB/s

16.6 12.8

测试中的平均数值
更快的写入速度，GB/s

13.8 6.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Avant Technology F6451U64F9333G 4GB

Corsair CMW32GX4M4A2666C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

12.8 16.6
写入速度，GB/s

6.7 13.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 3405

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273DH0-CH9 4GB

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AMD AE34G1601U1 4GB

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G Skill Intl F4-3200C14-8GTRG 8GB

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Samsung M395T2863QZ4-CF76 1GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Crucial Technology CT8G4SFS824A.M8FH 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

Kingston 9905403-500.A01LF 8GB

Kingston 9905403-500.A01LF 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMG16GX4M2D3600C18 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB