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Samsung M378A1K43EB2-CWE 8GB
Avant Technology W642GU42J5213N 16GB

Samsung M378A1K43EB2-CWE 8GB vs Avant Technology W642GU42J5213N 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Avant Technology W642GU42J5213N 16GB

Avant Technology W642GU42J5213N 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
Avant Technology W642GU42J5213N 16GB 需要考虑的原因
Avant Technology W642GU42J5213N 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 33
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    18.3 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Avant Technology W642GU42J5213N 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 23
  • 读取速度，GB/s
    17.6 left arrow 18.3
  • 写入速度，GB/s
    12.0 left arrow 13.7
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3152

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Avant Technology W642GU42J5213N 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Avant Technology W642GU42J5213N 16GB
Avant Technology W642GU42J5213N 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-4133C19-8GTZA 8GB
G Skill Intl F4-4133C19-8GTZA 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C14-16GTRS 16GB
G Skill Intl F4-3200C14-16GTRS 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston KV0M5R-HYD 8GB
Kingston KV0M5R-HYD 8GB
内存RAM
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Mushkin MB[A/B]4U240FFFF16G 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMW64GX4M8Z2933C16 8GB
Corsair CMW64GX4M8Z2933C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
G Skill Intl F4-3333C16-8GTZB 8GB
G Skill Intl F4-3333C16-8GTZB 8GB
内存RAM