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G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M393A2K43CB1-CRC 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs Samsung M393A2K43CB1-CRC 16GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
Samsung M393A2K43CB1-CRC 16GB

Samsung M393A2K43CB1-CRC 16GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 11
    测试中的平均数值
Samsung M393A2K43CB1-CRC 16GB 需要考虑的原因
Samsung M393A2K43CB1-CRC 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 45
    左右 -36% 更低的延时
  • 更快的写入速度，GB/s
    8.0 left arrow 2,935.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M393A2K43CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 33
  • 读取速度，GB/s
    6,336.8 left arrow 11.0
  • 写入速度，GB/s
    2,935.8 left arrow 8.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 2200

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

Samsung M393A2K43CB1-CRC 16GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M393A2K43CB1-CRC 16GB
Samsung M393A2K43CB1-CRC 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Avant Technology W6451U66J9266ND 4GB
Avant Technology W6451U66J9266ND 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
内存RAM
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A1K43BB1-CRC 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMSX32GX4M2A3000C18 16GB
Corsair CMSX32GX4M2A3000C18 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
SK Hynix HMA81GU6CJR8N-UH 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMR16GX4M2D3200C16 8GB
Corsair CMR16GX4M2D3200C16 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMW64GX4M4D3600C18 16GB
Corsair CMW64GX4M4D3600C18 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Gloway International (HK) STKD4GAM2133-F 8GB
Gloway International (HK) STKD4GAM2133-F 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Essencore Limited KD48GU481-26N1600 8GB
Essencore Limited KD48GU481-26N1600 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3200C16-16GVR 16GB
G Skill Intl F4-3200C16-16GVR 16GB
内存RAM