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G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
比较
G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB
总分
G Skill Intl F3-10600CL9-2GBNT 2GB
总分
Crucial Technology BLS16G4D30AESC.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
28
左右 7% 更低的延时
需要考虑的原因
Crucial Technology BLS16G4D30AESC.M16FE 16GB
报告一个错误
更快的读取速度,GB/s
17.4
13.2
测试中的平均数值
更快的写入速度,GB/s
13.1
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
28
读取速度,GB/s
13.2
17.4
写入速度,GB/s
8.4
13.1
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2070
3437
G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Transcend Information JM3200HLE-16G 16GB
Samsung M471A5244CB0-CWE 4GB
Corsair CMV16GX4M1L2400C16 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 99U5704-001.A00G 4GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMA41GR7MFR8N-TF 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CB8GU2400.C8JT 8GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-2133C15-16GVR 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Transcend Information JM3200HLE-16G 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMW256GX4M8E3200C16 32GB
报告一个错误
×
Bug description
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