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Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CB8GU2400.C8JT 8GB

Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology CB8GU2400.C8JT 8GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
Crucial Technology CB8GU2400.C8JT 8GB

Crucial Technology CB8GU2400.C8JT 8GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 71
    左右 65% 更低的延时
Crucial Technology CB8GU2400.C8JT 8GB 需要考虑的原因
Crucial Technology CB8GU2400.C8JT 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 12.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CB8GU2400.C8JT 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 71
  • 读取速度，GB/s
    12.1 left arrow 16.0
  • 写入速度，GB/s
    8.6 left arrow 8.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 1956

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

Crucial Technology CB8GU2400.C8JT 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5665-001.A00G 4GB
Kingston 99U5665-001.A00G 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Corsair CM4X16GE2666C18S2 16GB
Corsair CM4X16GE2666C18S2 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Mushkin 99[2/7/4]200F 8GB
Mushkin 99[2/7/4]200F 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9905744-027.A00G 16GB
Kingston 9905744-027.A00G 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston 9905625-011.A00G 8GB
Kingston 9905625-011.A00G 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Micron Technology M471A1K43BB1-CRC 8GB
Micron Technology M471A1K43BB1-CRC 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Samsung M471A1A43DB0-CPB 8GB
Samsung M471A1A43DB0-CPB 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Apacer Technology GD2.1542WS.003 8GB
Apacer Technology GD2.1542WS.003 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4400C16-8GTRS 8GB
G Skill Intl F4-4400C16-8GTRS 8GB
内存RAM
Crucial Technology CT16G48C40U5.M8A1 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
SK Hynix GKE160SO102408-2400 16GB
SK Hynix GKE160SO102408-2400 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N
内存RAM