Kingston 2GB-DDR2 800Mhz 2GB vs Kingston 9905744-027.A00G 16GB

总分

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分

Kingston 9905744-027.A00G 16GB

Kingston 9905744-027.A00G 16GB

差异规格评论

差异

Kingston 2GB-DDR2 800Mhz 2GB

需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB

报告一个错误

低于PassMark测试中的延时，ns

43 46

左右 7% 更低的延时
更快的读取速度，GB/s

5 19.1

测试中的平均数值
更快的写入速度，GB/s

2,160.7 15.3

测试中的平均数值

Kingston 9905744-027.A00G 16GB

需要考虑的原因
Kingston 9905744-027.A00G 16GB

报告一个错误

更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 9905744-027.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

43 46
读取速度，GB/s

5,987.5 19.1
写入速度，GB/s

2,160.7 15.3
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

957 3168

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2C3600C20 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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G Skill Intl F4-4000C18-8GTZ 8GB

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Samsung M391B5673EH1-CH9 2GB

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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

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SK Hynix HMT41GU7BFR8C-RD 8GB

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G Skill Intl F4-2133C15-8GFT 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CM4S16GL3200K18K2 16GB

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Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

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Crucial Technology CT8G4SFD8213.C16FBD2 8GB

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Samsung M378B5773DH0-CH9 2GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB