G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology CT16G4SFD8213.C16FDD 16GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

Crucial Technology CT16G4SFD8213.C16FDD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FDD 16GB

报告一个错误

更快的读取速度，GB/s

15.1 13.2

测试中的平均数值
更快的写入速度，GB/s

9.9 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

13.2 15.1
写入速度，GB/s

8.4 9.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 2732

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Corsair CMK16GX4M2Z3466C16 8GB

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Apacer Technology 78.CAGPN.AZ50C 8GB

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Chun Well Technology Holding Limited CL18-22-22 D4-3600

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Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

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Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Kingston KF3200C18D4/8G 8GB

Kingston KF3200C18D4/8G 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston HP32D4S2S1ME-8 8GB

Kingston HP32D4S2S1ME-8 8GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology AO1P32NC8T1-BCIS 8GB

A-DATA Technology AO1P32NC8T1-BCIS 8GB