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Corsair CMZ16GX3M2A2400C10 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Corsair CMZ16GX3M2A2400C10 8GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

总分
star star star star star
Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分
star star star star star
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

差异 规格 评论

差异

Corsair CMZ16GX3M2A2400C10 8GB 需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 37
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 34
  • 读取速度，GB/s
    11.4 left arrow 17.3
  • 写入速度，GB/s
    7.4 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1683 left arrow 3606

Corsair CMZ16GX3M2A2400C10 8GB RAM的比较

G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
内存RAM
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内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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内存RAM
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AMD AE34G1601U1 4GB
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Kingston SMD4-S8G48HJ-26V 8GB
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内存RAM
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Samsung M393B1G70BH0-YK0 8GB
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内存RAM
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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G Skill Intl F4-3000C16-16GTZN 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
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EVGA 16G-D4-2400-MR 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology DDR4 3000 2OZ 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
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Micron Technology 18HTF12872AY-800F1 1GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM