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G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
比较
G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology CT16G4SFRA32A.C16FJ 16GB
总分
G Skill Intl F3-10600CL9-2GBNT 2GB
总分
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
42
左右 38% 更低的延时
需要考虑的原因
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
报告一个错误
更快的读取速度,GB/s
15.2
13.2
测试中的平均数值
更快的写入速度,GB/s
9.5
8.4
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
42
读取速度,GB/s
13.2
15.2
写入速度,GB/s
8.4
9.5
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2070
2597
G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT325U6CFR8C-PB 2GB
Apacer Technology 78.C2GFA.AF30B 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9905744-066.A00G 32GB
Kingston KHX1600C9D3/8G 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Kingston 9905471-076.A00LF 8GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-4400C18-8GTZRC 8GB
Kingston 99U5474-023.A00LF 4GB
Corsair CMK8GX4M2B4000C19 4GB
Samsung M471B5273DH0-CK0 4GB
Micron Technology CT8G4DFD8213.16FA11 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Samsung M471B5173EB0-YK0 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Samsung 1600 CL10 Series 8GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Kingston K1N7HK-ELC 2GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-4266C19-8GTZA 8GB
报告一个错误
×
Bug description
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