G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology CT4G4DFS8213.C8FAD11 4GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAD11 4GB

报告一个错误

更快的读取速度，GB/s

14.4 13.2

测试中的平均数值
更快的写入速度，GB/s

10.8 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT4G4DFS8213.C8FAD11 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 26
读取速度，GB/s

13.2 14.4
写入速度，GB/s

8.4 10.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 2497

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Apacer Technology 78.DAGP2.4030B 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

A-DATA Technology AO1P32MCST2-BZPS 16GB