RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
比较
G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology CT4G4DFS824A.C8FBD2 4GB
总分
G Skill Intl F3-10600CL9-2GBNT 2GB
总分
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
33
左右 21% 更低的延时
需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
报告一个错误
更快的读取速度,GB/s
14.3
13.2
测试中的平均数值
更快的写入速度,GB/s
8.8
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
33
读取速度,GB/s
13.2
14.3
写入速度,GB/s
8.4
8.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2070
2086
G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMR32GX4M4C3000C16 8GB
ASint Technology SSA302G08-EGN1C 4GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Corsair CMZ16GX3M2A1866C9 8GB
G Skill Intl F4-2800C15-16GRKD 16GB
G Skill Intl F4-3600C14-8GVKA 8GB
Team Group Inc. DDR4 3600 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
A-DATA Technology DDR3 1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C14-16GTZN 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M378A5143TB2-CTD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Chun Well Technology Holding Limited MD4U1632161DCW 16G
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston ACR26D4U9S1KA-4 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2400C15-16GTZRX 16GB
报告一个错误
×
Bug description
Source link