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G Skill Intl F3-2133C9-4GAB 4GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB

G Skill Intl F3-2133C9-4GAB 4GB vs Ramaxel Technology RMUA5180ME78HBF-2666 16GB

总分
star star star star star
G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分
star star star star star
Ramaxel Technology RMUA5180ME78HBF-2666 16GB

Ramaxel Technology RMUA5180ME78HBF-2666 16GB

差异 规格 评论

差异

G Skill Intl F3-2133C9-4GAB 4GB 需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 16.2
    测试中的平均数值
Ramaxel Technology RMUA5180ME78HBF-2666 16GB 需要考虑的原因
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 36
    左右 -13% 更低的延时
  • 更快的写入速度，GB/s
    11.8 left arrow 11.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2133C9-4GAB 4GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 32
  • 读取速度，GB/s
    16.4 left arrow 16.2
  • 写入速度，GB/s
    11.0 left arrow 11.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2729 left arrow 3070

G Skill Intl F3-2133C9-4GAB 4GB RAM的比较

Corsair CMZ8GX3M2A2133C11 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Ramaxel Technology RMUA5180ME78HBF-2666 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
内存RAM
Nanya Technology M2F2G64CB88B7N-CG 2GB
Nanya Technology M2F2G64CB88B7N-CG 2GB
G Skill Intl F4-3200C16-16GVR 16GB
G Skill Intl F4-3200C16-16GVR 16GB
内存RAM
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
SK Hynix HMA82GU7AFR8N-UH 16GB
SK Hynix HMA82GU7AFR8N-UH 16GB
内存RAM
Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
Essencore Limited KD48GU880-36A180X 8GB
Essencore Limited KD48GU880-36A180X 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMK64GX4M8A2666C16 8GB
Corsair CMK64GX4M8A2666C16 8GB
内存RAM
Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
INTENSO GKE800UD102408-2133 8GB
INTENSO GKE800UD102408-2133 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston K9CXF2-MIE 8GB
Kingston K9CXF2-MIE 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C15-16GTZSK 16GB
G Skill Intl F4-3200C15-16GTZSK 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 9905678-006.A00G 4GB
Kingston 9905678-006.A00G 4GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Kingston 99U5663-007.A00G 16GB
Kingston 99U5663-007.A00G 16GB
内存RAM