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Samsung M471B1G73DB0-YK0 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB

Samsung M471B1G73DB0-YK0 8GB vs Chun Well Technology Holding Limited D4U0836181B 8GB

总分
star star star star star
Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0836181B 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB

差异 规格 评论

差异

Samsung M471B1G73DB0-YK0 8GB 需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB
报告一个错误
Chun Well Technology Holding Limited D4U0836181B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0836181B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 45
    左右 -41% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B1G73DB0-YK0 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 32
  • 读取速度，GB/s
    11.9 left arrow 15.6
  • 写入速度，GB/s
    8.1 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 14 16 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2077 left arrow 3279

Samsung M471B1G73DB0-YK0 8GB RAM的比较

Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB

Chun Well Technology Holding Limited D4U0836181B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3800C14-8GTZN 8GB
G Skill Intl F4-3800C14-8GTZN 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMV16GX4M1A2666C18 16GB
Corsair CMV16GX4M1A2666C18 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMH32GX4M2Z3600C18 16GB
Corsair CMH32GX4M2Z3600C18 16GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
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SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
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Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMD32GX4M2C3466C16W 16GB
Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM2666HLB-8G 8GB
Transcend Information JM2666HLB-8G 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-4266C19-8GTRG 8GB
G Skill Intl F4-4266C19-8GTRG 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston MSI21D4S15HAG/8G 8GB
Kingston MSI21D4S15HAG/8G 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMD64GX4M8A2800C16 8GB
Corsair CMD64GX4M8A2800C16 8GB
内存RAM
Samsung M378A5143EB1-CPB 4GB
Samsung M378A5143EB1-CPB 4GB
Kingston 9905678-014.A00G 4GB
Kingston 9905678-014.A00G 4GB
内存RAM
SK Hynix HMT451U6BFR8A-PB 4GB
SK Hynix HMT451U6BFR8A-PB 4GB
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SK Hynix HMA851U6CJR6N-VK 4GB
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