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G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
比较
G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology CT4G4SFS624A.C4FB 4GB
总分
G Skill Intl F3-10600CL9-2GBNT 2GB
总分
Crucial Technology CT4G4SFS624A.C4FB 4GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
84
左右 69% 更低的延时
更快的写入速度,GB/s
8.4
6.8
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4SFS624A.C4FB 4GB
报告一个错误
更快的读取速度,GB/s
14.8
13.2
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
84
读取速度,GB/s
13.2
14.8
写入速度,GB/s
8.4
6.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2070
1574
G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology CT4G4SFS624A.C4FB 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5173DB0-YK0 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3600C16-16GTRSC 16GB
Samsung M471B5273CH0-CH9 4GB
Kingston X75V1H-MIE 32GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix GKE800UD102408-2400 8GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1K43BB1-CPB 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Kingston HX318C10FK/4 4GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M393A5143DB0-CRC 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston KHX2666C13D4/8GX 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology C 8GB
Kingston 99U5474-028.A00LF 4GB
Samsung M393A1G43DB0-CPB 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Samsung M378A5244CB0-CTD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Essencore Limited KD48GS88J-26N1900 8GB
报告一个错误
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Bug description
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