G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology CT8G4SFS824A.C8FDD1 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FDD1 8GB

报告一个错误

更快的读取速度，GB/s

15 13.2

测试中的平均数值
更快的写入速度，GB/s

10.8 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

13.2 15.0
写入速度，GB/s

8.4 10.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2070 2516

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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AMD AE34G1601U1 4GB

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Samsung M471B5273DH0-CH9 4GB

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Micron Technology 9ASF51272PZ-2G1B1 4GB

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Kingston 9905403-061.A00LF 2GB

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Avant Technology W641GU67J7240N8 8GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston KHX3466C17D4/16GX 16GB

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Samsung M393B1G70BH0-CK0 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB