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G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
比较
G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology CT8G4SFS832A.C8FE 8GB
总分
G Skill Intl F3-10600CL9-2GBNT 2GB
总分
Crucial Technology CT8G4SFS832A.C8FE 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
48
左右 46% 更低的延时
需要考虑的原因
Crucial Technology CT8G4SFS832A.C8FE 8GB
报告一个错误
更快的读取速度,GB/s
16.8
13.2
测试中的平均数值
更快的写入速度,GB/s
13.4
8.4
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
48
读取速度,GB/s
13.2
16.8
写入速度,GB/s
8.4
13.4
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2070
2852
G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology CT8G4SFS832A.C8FE 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
ASint Technology SSA302G08-EGN1C 4GB
Avant Technology J642GU42J9266N2 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX2666C13D4/8GX 8GB
PNY Electronics PNY 2GB
A-DATA Technology 11137401 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Samsung M378B5673EH1-CF8 2GB
Panram International Corporation D4N2400PS-8G 8GB
Kingston 9905403-156.A00LF 2GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
报告一个错误
×
Bug description
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