G Skill Intl F3-10600CL9-2GBNT 2GB vs Gloway International Co. Ltd. TYP4U3000E16082C 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 53

左右 51% 更低的延时

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYP4U3000E16082C 8GB

报告一个错误

更快的读取速度，GB/s

16.5 13.2

测试中的平均数值
更快的写入速度，GB/s

9.6 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 53
读取速度，GB/s

13.2 16.5
写入速度，GB/s

8.4 9.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2070 2301

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

Crucial Technology BLE16G4D30AEEA.K16FB 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston 9905700-012.A00G 8GB

Kingston 9905700-012.A00G 8GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Panram International Corporation W4U2400PS-8G 8GB

Panram International Corporation W4U2400PS-8G 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Micron Technology 18ADF1G72PZ-2G1A1 8GB

Micron Technology 18ADF1G72PZ-2G1A1 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-3600C19-16GSXW 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-3000C15-8GRKB 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Kingston 9905403-003.B00LF 4GB

Kingston 9905403-003.B00LF 4GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kllisre HMA81GU6AFR8N-VK 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston KHX2133C14S4/16G 16GB

Kingston KHX2133C14S4/16G 16GB