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G Skill Intl F3-2133C9-4GAB 4GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB

G Skill Intl F3-2133C9-4GAB 4GB vs Micron Technology 18ADF1G72PZ-2G1A1 8GB

总分
star star star star star
G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分
star star star star star
Micron Technology 18ADF1G72PZ-2G1A1 8GB

Micron Technology 18ADF1G72PZ-2G1A1 8GB

差异 规格 评论

差异

G Skill Intl F3-2133C9-4GAB 4GB 需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 6.8
    测试中的平均数值
Micron Technology 18ADF1G72PZ-2G1A1 8GB 需要考虑的原因
Micron Technology 18ADF1G72PZ-2G1A1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 36
    左右 -13% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2133C9-4GAB 4GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 32
  • 读取速度，GB/s
    16.4 left arrow 9.2
  • 写入速度，GB/s
    11.0 left arrow 6.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2729 left arrow 2017

G Skill Intl F3-2133C9-4GAB 4GB RAM的比较

Corsair CMZ8GX3M2A2133C11 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB

Micron Technology 18ADF1G72PZ-2G1A1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
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Unifosa Corporation HU564404EP0200 4GB
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Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
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Kingston 9905402-665.A00LF 4GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
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内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Samsung M471A1G43EB1-CRC 8GB
Samsung M471A1G43EB1-CRC 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
内存RAM
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Nanya Technology M2Y1GH64TU8HD6B-AC 1GB
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内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
Kingston ACR32D4U2S8ME-16 16GB
Kingston ACR32D4U2S8ME-16 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
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Apacer Technology 76.B305G.D500B 4GB
内存RAM
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Samsung M471B5674QH0-YK0 2GB
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G Skill Intl F4-3600C14-16GVKA 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
内存RAM
ASint Technology SSZ2128M8-JGE1F 2GB
ASint Technology SSZ2128M8-JGE1F 2GB
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
内存RAM