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SK Hynix HMT451S6BFR8A-PB 4GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
比较
SK Hynix HMT451S6BFR8A-PB 4GB vs Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
总分
SK Hynix HMT451S6BFR8A-PB 4GB
总分
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT451S6BFR8A-PB 4GB
报告一个错误
低于PassMark测试中的延时,ns
44
63
左右 30% 更低的延时
需要考虑的原因
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
报告一个错误
更快的读取速度,GB/s
16.1
12.3
测试中的平均数值
更快的写入速度,GB/s
9.1
7.8
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT451S6BFR8A-PB 4GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
63
读取速度,GB/s
12.3
16.1
写入速度,GB/s
7.8
9.1
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1977
1932
SK Hynix HMT451S6BFR8A-PB 4GB RAM的比较
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT451S6BFR8A-PB 4GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Samsung M471A5143EB0-CPB 4GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston 9905622-024.A00G 4GB
A-DATA Technology DOVF1B163G2G 2GB
Apacer Technology 78.BAGN8.AZC0B 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-2666C15-8GVB 8GB
Kingston 99U5584-017.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
Samsung M3 78T5663RZ3-CF7 2GB
Kingston 9905622-024.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology J641GU42J9266NL 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393A2K43DB3-CWE 16GB
Kingston 99U5474-023.A00LF 4GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-4400C19-32GVK 32GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston 9905700-013.A00G 8GB
Samsung M471A5244CB0-CWE 4GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
报告一个错误
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