Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M393A2K43DB3-CWE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M393A2K43DB3-CWE 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 53

左右 55% 更低的延时
更快的读取速度，GB/s

16 10.3

测试中的平均数值
更快的写入速度，GB/s

12.5 7.7

测试中的平均数值

Samsung M393A2K43DB3-CWE 16GB

需要考虑的原因
Samsung M393A2K43DB3-CWE 16GB

报告一个错误

更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M393A2K43DB3-CWE 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 53
读取速度，GB/s

16.0 10.3
写入速度，GB/s

12.5 7.7
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2925 2356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMT32GX4M2C3200C14 16GB

Corsair CMT32GX4M2C3200C14 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston 9905702-135.A00G 8GB

Kingston 9905702-135.A00G 8GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-3000C15-8GRKB 8GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS4G4D240FSA.8FBD 4GB

Crucial Technology BLS4G4D240FSA.8FBD 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Essencore Limited KD4AGU880-32A160U 16GB

Essencore Limited KD4AGU880-32A160U 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-2133C15-8GVR 8GB

G Skill Intl F4-2133C15-8GVR 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston 9905713-001.A00G 4GB

Kingston 9905713-001.A00G 4GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB