RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393A2K43DB3-CWE 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M393A2K43DB3-CWE 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M393A2K43DB3-CWE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
53
Around 55% lower latency
Faster reading speed, GB/s
16
10.3
Average value in the tests
Faster write speed, GB/s
12.5
7.7
Average value in the tests
Reasons to consider
Samsung M393A2K43DB3-CWE 16GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393A2K43DB3-CWE 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
53
Read speed, GB/s
16.0
10.3
Write speed, GB/s
12.5
7.7
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
2356
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M393A2K43DB3-CWE 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Kingston 9905471-006.A01LF 4GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Qimonda 64T128020EDL2.5C2 1GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMK64GX4M8B3200C16 8GB
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F4-3333C16-16GTZ 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMH128GX4M4E3200C16 32GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Samsung M393B1K70CH0-YH9 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9905624-023.A00G 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Samsung M471A2K43EB1-CWE 16GB
Crucial Technology RM51264BA1339.16FR 4GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Kingston 9905469-124.A00LF 4GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Report a bug
×
Bug description
Source link