RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393A2K43DB3-CWE 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M393A2K43DB3-CWE 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Samsung M393A2K43DB3-CWE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
53
Around 55% lower latency
Faster reading speed, GB/s
16
10.3
Average value in the tests
Faster write speed, GB/s
12.5
7.7
Average value in the tests
Reasons to consider
Samsung M393A2K43DB3-CWE 16GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393A2K43DB3-CWE 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
53
Read speed, GB/s
16.0
10.3
Write speed, GB/s
12.5
7.7
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
2356
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M393A2K43DB3-CWE 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQKD1A08 1GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3200C16-4GRB 4GB
AMD R5316G1609U2K 8GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Kingston ACR512X64D3S13C9G 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
Kingston 9905471-002.A00LF 2GB
V-GEN D4S8GL32A8TS 8GB
Kingston 99U5584-005.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Samsung M378B5273CH0-CH9 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Corsair CMK16GX4M2D3600C18 8GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3200C16-8GTZB 8GB
Samsung M393B2G70BH0-CK0 16GB
Essencore Limited KD48GU88C-26N190A 8GB
Kingston 9905471-001.A01LF 2GB
Kingston KHX2133C14/8G 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
Report a bug
×
Bug description
Source link