G Skill Intl F3-10600CL9-2GBNT 2GB vs Kingston 9905702-008.A00G 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Kingston 9905702-008.A00G 8GB

Kingston 9905702-008.A00G 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 33

左右 21% 更低的延时

Kingston 9905702-008.A00G 8GB

需要考虑的原因
Kingston 9905702-008.A00G 8GB

报告一个错误

更快的读取速度，GB/s

14.9 13.2

测试中的平均数值
更快的写入速度，GB/s

8.8 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston 9905702-008.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 33
读取速度，GB/s

13.2 14.9
写入速度，GB/s

8.4 8.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2070 2447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Corsair CMT32GX4M2Z3600C18 16GB

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Samsung 1600 CL10 Series 8GB

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Kingston 9905471-002.A00LF 2GB

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Crucial Technology BL8G30C15U4B.M8FE 8GB

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Corsair CMG16GX4M2E3200C16 8GB

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A-DATA Technology DDR4 2666 8GB

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Kingston 9965596-016.B01G 8GB

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Corsair CMK32GX4M2F4000C19 16GB

Corsair CMK32GX4M2F4000C19 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMT32GX4M4C3000C15 8GB

Corsair CMT32GX4M4C3000C15 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB