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G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston ACR26D4U9D8MH-16 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Kingston ACR26D4U9D8MH-16 16GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
Kingston ACR26D4U9D8MH-16 16GB

Kingston ACR26D4U9D8MH-16 16GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
Kingston ACR26D4U9D8MH-16 16GB 需要考虑的原因
Kingston ACR26D4U9D8MH-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 26
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston ACR26D4U9D8MH-16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 25
  • 读取速度，GB/s
    13.2 left arrow 16.3
  • 写入速度，GB/s
    8.4 left arrow 9.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 2614

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Kingston ACR26D4U9D8MH-16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung T471A1K43CB1-CRC 8GB
Samsung T471A1K43CB1-CRC 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-2800C15-4GVR 4GB
G Skill Intl F4-2800C15-4GVR 4GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston ACR26D4U9D8MH-16 16GB
Kingston ACR26D4U9D8MH-16 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMT64GX4M4K3600C16 16GB
Corsair CMT64GX4M4K3600C16 16GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
DSL Memory CIR-W4SUSS2408G 8GB
DSL Memory CIR-W4SUSS2408G 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Corsair CM4X4GF2133C13K4 4GB
Corsair CM4X4GF2133C13K4 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3600C18-32GTRS 32GB
G Skill Intl F4-3600C18-32GTRS 32GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
内存RAM
Kingston 99P5471-016.A00LF 8GB
Kingston 99P5471-016.A00LF 8GB
Micron Technology M471A1K43BB1-CRC 8GB
Micron Technology M471A1K43BB1-CRC 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Kingston 9905701-141.A00G 16GB
Kingston 9905701-141.A00G 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3200C14-8GTZKY 8GB
G Skill Intl F4-3200C14-8GTZKY 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Apacer Technology 78.CAGR4.40C0B 8GB
Apacer Technology 78.CAGR4.40C0B 8GB
内存RAM