G Skill Intl F3-10600CL9-2GBNT 2GB vs V-Color Technology Inc. TN416G26D819-SB 16GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

V-Color Technology Inc. TN416G26D819-SB 16GB

V-Color Technology Inc. TN416G26D819-SB 16GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 33

左右 21% 更低的延时

V-Color Technology Inc. TN416G26D819-SB 16GB

需要考虑的原因
V-Color Technology Inc. TN416G26D819-SB 16GB

报告一个错误

更快的读取速度，GB/s

15 13.2

测试中的平均数值
更快的写入速度，GB/s

8.5 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

V-Color Technology Inc. TN416G26D819-SB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 33
读取速度，GB/s

13.2 15.0
写入速度，GB/s

8.4 8.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2070 2524

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

V-Color Technology Inc. TN416G26D819-SB 16GB

V-Color Technology Inc. TN416G26D819-SB 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston 9905624-023.A00G 8GB

Kingston 9905624-023.A00G 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-2666C19-32GNT 32GB

G Skill Intl F4-2666C19-32GNT 32GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M393A1K43BB0-CRC 8GB

Samsung M393A1K43BB0-CRC 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB