TwinMOS 8DHE3MN8-HATP 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

总分

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

差异规格评论

差异

TwinMOS 8DHE3MN8-HATP 2GB

需要考虑的原因
TwinMOS 8DHE3MN8-HATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16

测试中的平均数值
更快的写入速度，GB/s

870.4 10.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 87

左右 -263% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DHE3MN8-HATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

87 24
读取速度，GB/s

3,155.6 16.0
写入速度，GB/s

870.4 10.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

417 2731

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-2666C19-32GNT 32GB

G Skill Intl F4-2666C19-32GNT 32GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M393A1K43BB0-CRC 8GB

Samsung M393A1K43BB0-CRC 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMU32GX4M2A2400C14 16GB

Corsair CMU32GX4M2A2400C14 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

G Skill Intl F4-3000C16-8GTZR 8GB

G Skill Intl F4-3000C16-8GTZR 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB