G Skill Intl F3-12800CL7-4GBXM 4GB vs Crucial Technology CT16G4SFD8266.C16FJ 16GB

总分

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

差异规格评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 38

左右 5% 更低的延时

Crucial Technology CT16G4SFD8266.C16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.C16FJ 16GB

报告一个错误

更快的写入速度，GB/s

13.7 8.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-12800CL7-4GBXM 4GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 38
读取速度，GB/s

14.8 14.8
写入速度，GB/s

8.7 13.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2481 2843

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Team Group Inc. Team-Elite-2133 4GB

Team Group Inc. Team-Elite-2133 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB

Transcend Information AQD-SD4U16GN21-SE 16GB

Transcend Information AQD-SD4U16GN21-SE 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

G Skill Intl F4-2133C15-8GRR 8GB

G Skill Intl F4-2133C15-8GRR 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMD16GX4M4B2133C10 4GB

Corsair CMD16GX4M4B2133C10 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMK32GX4M2D3000C16 16GB

Corsair CMK32GX4M2D3000C16 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Corsair CMD8GX4M2B3466C18 4GB

Corsair CMD8GX4M2B3466C18 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.B1GN3.AZ32B 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB