G Skill Intl F3-12800CL7-4GBXM 4GB vs G Skill Intl F4-3200C15-4GRKD 4GB

总分

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分

G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

差异规格评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB

报告一个错误

G Skill Intl F4-3200C15-4GRKD 4GB

需要考虑的原因
G Skill Intl F4-3200C15-4GRKD 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 -44% 更低的延时
更快的读取速度，GB/s

16.2 14.8

测试中的平均数值
更快的写入速度，GB/s

12.6 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 25
读取速度，GB/s

14.8 16.2
写入速度，GB/s

8.7 12.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2481 3187

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

SK Hynix HMA41GU6MFR8N-TF 8GB

SK Hynix HMA41GU6MFR8N-TF 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.C1GMM.AUF0B 8GB

Apacer Technology 78.C1GMM.AUF0B 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD16GX4M4B3200C16 4GB

Corsair CMD16GX4M4B3200C16 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Essencore Limited IM48GU88A30-FGGHMZ 8GB

Essencore Limited IM48GU88A30-FGGHMZ 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Kllisre HMA81GU6AFR8N-VK 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston 9905625-066.A00G 16GB

Kingston 9905625-066.A00G 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Kingston KHX2400C15S4/4G 4GB

Kingston KHX2400C15S4/4G 4GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

SK Hynix HMT84GL7AMR4C-RD 32GB

SK Hynix HMT84GL7AMR4C-RD 32GB

Kingston CAC24D4S7D8MB-16 16GB

Kingston CAC24D4S7D8MB-16 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905630-018.A00G 8GB

Kingston 9905630-018.A00G 8GB