G Skill Intl F3-12800CL7-4GBXM 4GB vs Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

总分

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分

Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

差异规格评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB

报告一个错误

Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 36

左右 -3% 更低的延时
更快的读取速度，GB/s

19 14.8

测试中的平均数值
更快的写入速度，GB/s

13.8 8.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-12800CL7-4GBXM 4GB

Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 35
读取速度，GB/s

14.8 19.0
写入速度，GB/s

8.7 13.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2481 3331

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Samsung M471A2K43DB1-CWE 16GB

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Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Kingmax Semiconductor GLAG43F-18---------- 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C14-16GRK 16GB

G Skill Intl F4-2400C14-16GRK 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMD16GX4M4B3200C15 4GB

Corsair CMD16GX4M4B3200C15 4GB