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G Skill Intl F3-12800CL7-4GBXM 4GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB vs Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

总分
star star star star star
G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

差异 规格 评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB
报告一个错误
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 36
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-12800CL7-4GBXM 4GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 28
  • 读取速度，GB/s
    14.8 left arrow 17.5
  • 写入速度，GB/s
    8.7 left arrow 15.3
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2481 left arrow 3673

G Skill Intl F3-12800CL7-4GBXM 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F3-19200CL9-4GBZMD 4GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-444.A00LF 4GB
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Corsair CMT64GX4M4Z3600C18 16GB
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内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMK64GX4M82800C14 8GB
Corsair CMK64GX4M82800C14 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-2400C15-4GVR 4GB
G Skill Intl F4-2400C15-4GVR 4GB
内存RAM
Kingston 9905469-153.A00LF 4GB
Kingston 9905469-153.A00LF 4GB
G Skill Intl F4-3200C16-4GVK 4GB
G Skill Intl F4-3200C16-4GVK 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
AMD R744G2400U1S 4GB
AMD R744G2400U1S 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMR64GX4M4A2666C16 16GB
Corsair CMR64GX4M4A2666C16 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-4000C19-4GTZ 4GB
G Skill Intl F4-4000C19-4GTZ 4GB
内存RAM