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G Skill Intl F3-12800CL7-4GBXM 4GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB vs Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

总分
star star star star star
G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

差异 规格 评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB
报告一个错误
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 36
    左右 -20% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-12800CL7-4GBXM 4GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 30
  • 读取速度，GB/s
    14.8 left arrow 15.6
  • 写入速度，GB/s
    8.7 left arrow 12.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2481 left arrow 3164

G Skill Intl F3-12800CL7-4GBXM 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F3-19200CL9-4GBZMD 4GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Crucial Technology BL16G32C16S4B.16FE 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston 9905622-051.A00G 8GB
Kingston 9905622-051.A00G 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston 9905702-071.A00G 8GB
Kingston 9905702-071.A00G 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMR64GX4M8C3200C16 8GB
Corsair CMR64GX4M8C3200C16 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kingston KF2933C17S4/32G 32GB
Kingston KF2933C17S4/32G 32GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Avexir Technologies Corporation T 4GB
Avexir Technologies Corporation T 4GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMD16GX4M2E4000C19 8GB
Corsair CMD16GX4M2E4000C19 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 99U5665-004.A00G 4GB
Kingston 99U5665-004.A00G 4GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
内存RAM