G Skill Intl F3-12800CL7-4GBXM 4GB vs Kingmax Semiconductor GSAG42F-18---------- 8GB

总分

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分

Kingmax Semiconductor GSAG42F-18---------- 8GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

差异规格评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB

报告一个错误

Kingmax Semiconductor GSAG42F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GSAG42F-18---------- 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 36

左右 -57% 更低的延时
更快的读取速度，GB/s

15.5 14.8

测试中的平均数值
更快的写入速度，GB/s

12.2 8.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-12800CL7-4GBXM 4GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 23
读取速度，GB/s

14.8 15.5
写入速度，GB/s

8.7 12.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2481 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-3333C16-16GTZSW 16GB

G Skill Intl F4-3333C16-16GTZSW 16GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Golden Empire CL15-17-17 D4-3000 8GB

Golden Empire CL15-17-17 D4-3000 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Apacer Technology 78.B1GQB.4010B 4GB

Apacer Technology 78.B1GQB.4010B 4GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Apacer Technology 78.CAGPN.AZ50C 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston 99U5700-010.A00G 8GB

Kingston 99U5700-010.A00G 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-3600C17-16GTZKK 16GB

G Skill Intl F4-3600C17-16GTZKK 16GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMK16GX4M2K3600C19 8GB

Corsair CMK16GX4M2K3600C19 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB