G Skill Intl F3-12800CL7-4GBXM 4GB vs Micron Technology 8ATF1G64HZ-2G6B1 8GB

总分

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

总分

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

差异规格评论

差异

G Skill Intl F3-12800CL7-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB

报告一个错误

更快的读取速度，GB/s

14.8 14.5

测试中的平均数值

Micron Technology 8ATF1G64HZ-2G6B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 36

左右 -9% 更低的延时
更快的写入速度，GB/s

11.6 8.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-12800CL7-4GBXM 4GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 33
读取速度，GB/s

14.8 14.5
写入速度，GB/s

8.7 11.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2481 2590

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston 9905744-077.A00G 16GB

Kingston 9905744-077.A00G 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378A1G44BB0-CWE 8GB

Samsung M378A1G44BB0-CWE 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Avant Technology W641GU42J7240NC 8GB

Avant Technology W641GU42J7240NC 8GB

Gold Key Technology Co Ltd GKH800UD51208-1600 8GB

Gold Key Technology Co Ltd GKH800UD51208-1600 8GB

Kingston 9905783-025.A01G 16GB

Kingston 9905783-025.A01G 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-4000C17-16GTRSB 16GB

G Skill Intl F4-4000C17-16GTRSB 16GB

Kingston 9905471-054.A00LF 8GB

Kingston 9905471-054.A00LF 8GB

Kingston 99U5471-036.A00LF 8GB

Kingston 99U5471-036.A00LF 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD16GX4M2B3000C15 8GB

Corsair CMD16GX4M2B3000C15 8GB

Corsair CMD16GX3M4A2666C11 4GB

Corsair CMD16GX3M4A2666C11 4GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

Corsair CMD16GX3M4A2666C11 4GB

Corsair CMD16GX3M4A2666C11 4GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB