G Skill Intl F3-1333C9-4GIS 4GB vs Crucial Technology CT16G4DFD824A.C16FE 16GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

Crucial Technology CT16G4DFD824A.C16FE 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FE 16GB

报告一个错误

更快的读取速度，GB/s

14.9 12.4

测试中的平均数值
更快的写入速度，GB/s

11.4 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.4 14.9
写入速度，GB/s

7.5 11.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2014 2831

RAM Latency Calculator

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G Skill Intl F3-10600CL9-2GBNT 2GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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G Skill Intl F4-3200C16-8GSX 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Crucial Technology BL16G26C16S4B.16FD 16GB

Crucial Technology BL16G26C16S4B.16FD 16GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Kingston XRMWRN-HYA 16GB

Kingston XRMWRN-HYA 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

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Samsung M378B5773DH0-CH9 2GB

AMD R948G2806U2S 8GB

AMD R948G2806U2S 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3200C14-8GTRG 8GB

G Skill Intl F4-3200C14-8GTRG 8GB