G Skill Intl F3-1333C9-4GIS 4GB vs EVGA 16G-D4-2800-MR 4GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 28% 更低的延时

EVGA 16G-D4-2800-MR 4GB

需要考虑的原因
EVGA 16G-D4-2800-MR 4GB

报告一个错误

更快的读取速度，GB/s

13.2 12.4

测试中的平均数值
更快的写入速度，GB/s

9.4 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

EVGA 16G-D4-2800-MR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 39
读取速度，GB/s

12.4 13.2
写入速度，GB/s

7.5 9.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2014 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology CT51264BA1339.C16F 4GB

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Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

G Skill Intl F3-1333C9-4GIS 4GB

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EVGA 16G-D4-2800-MR 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CM4X16GC3600C18K2D 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

Samsung M393A2K40BB1-CRC 16GB

Samsung M393A2K40BB1-CRC 16GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3600C17-16GTZKW 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB

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Crucial Technology CT102464BF160B-16F 8GB

Kingston 9965640-001.C00G 16GB

Kingston 9965640-001.C00G 16GB