G Skill Intl F3-1333C9-4GIS 4GB vs Gloway International Co. Ltd. TYP4U3000E16082C 8GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 53

左右 47% 更低的延时

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYP4U3000E16082C 8GB

报告一个错误

更快的读取速度，GB/s

16.5 12.4

测试中的平均数值
更快的写入速度，GB/s

9.6 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 53
读取速度，GB/s

12.4 16.5
写入速度，GB/s

7.5 9.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2014 2301

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3733C17-16GTZKK 16GB

G Skill Intl F4-3733C17-16GTZKK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.C1GMM.AUC0B 8GB

Apacer Technology 78.C1GMM.AUC0B 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CM4X16GC3200C16K2 16GB

Corsair CM4X16GC3200C16K2 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SK Hynix HMT325U6BFR8C-H9 2GB

SK Hynix HMT325U6BFR8C-H9 2GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

Samsung M471B5273DH0-YK0 4GB

Samsung M471B5273DH0-YK0 4GB

Kingston SNY1333D3S9ELC/4G 4GB

Kingston SNY1333D3S9ELC/4G 4GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F4-2400C15-4GIS 4GB

G Skill Intl F4-2400C15-4GIS 4GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB